BEGIN:VCALENDAR VERSION:2.0 PRODID:-//NextToU//EN CALSCALE:GREGORIAN BEGIN:VEVENT UID:00444b03-70e6-45f8-8b3a-e605e730fc01@nexttoyou DTSTAMP:20261106T170202Z DTSTART:20261123T211500Z DTEND:20261123T221500Z SUMMARY:ECE Colloquium: Han Wui Then (Intel) LOCATION:Bill and Melinda Gates Hall G01\, 107 Hoy Rd\, Ithaca\, NY 14850 DESCRIPTION:Innovations in GaN Technology Powering Future Electronics\n\nA s high performance compute solutions scale to higher power for AI platfor ms\, gallium nitride (GaN) technology is gaining importance for its abili ty to offer higher performance\, efficiency and density beyond current si licon- and III-V-based technologies. GaN power delivery solution is expec ted to move closer to the load\, evolving from discrete solutions on moth erboard to ultra-dense GaN power chiplets in a compute die complex. As po wer density increases\, better efficiency and tighter integration are req uired. The GaN transistor technology needs to deliver high performance an d efficiency at ultra-high current densities. Moreover\, it needs to be a s complete as possible with the required integrated CMOS functionalities such as controllers\, drivers\, biasing\, telemetry\, etc.\, because ther e is simply no room in the complex to accommodate separate CMOS companion die. Finally\, it must also be capable of meeting all the required relia bility metrics for power electronics. In this talk\, I will discuss the t echnology ingredients needed to realize such a GaN chiplet technology and some of the latest innovations and advancements in 300mm GaN-on-silicon technology that are enabling industry to push the boundaries of performan ce\, density\, integration\, and reliability.\n\nBio: Han Wui is a senior principal engineer at Intel Foundry Technology Research where he leads p rocess R&D in analog and gallium nitride electronics. He is an IEEE Fe\n\ nhttp://next-to-u.app/events/00444b03-70e6-45f8-8b3a-e605e730fc01 URL:http://next-to-u.app/events/00444b03-70e6-45f8-8b3a-e605e730fc01 END:VEVENT END:VCALENDAR