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UID:0840dba9-b4db-459d-8493-c4d02fdb68f5@nexttoyou
DTSTAMP:20261106T171103Z
DTSTART:20261106T170000Z
DTEND:20261106T180000Z
SUMMARY:2D/3D Heterointegration: A New Take on Developing Diamond-Based El
 ectronics
LOCATION:Discovery Park Building B155\, 3940 N Elm St.\, Denton\, TX 76207
DESCRIPTION:Dr. Anirudha Sumant\, Group Leader and Materials Scientist at 
 the Center for Nanoscale Materials\, Argonne National Laboratory will pre
 sent a seminar titled "2D/3D Heterointegration: A new take on developing 
 diamond-based electronics" to the interested faculty and students at Disc
 overy Park.\n\nAbstract\n\nDiamond is a highly promising material for nex
 t-generation power electronics due to its exceptional thermal conductivit
 y\, wide bandgap\, high electric field strength\, radiation hardness\, an
 d superior carrier mobilities. However\, the advancement of diamond-based
  devices has been constrained by critical challenges\, including the lack
  of reliable n-type transport at room temperature\, high synthesis temper
 atures\, and limited scalability.\n\nIn this talk\, I will present our ef
 forts at Argonne to overcome these limitations through heterointegration 
 with two-dimensional (2D) and other semiconductor materials [1-2]. In par
 ticular\, we address the long-standing challenge of n-type doping in diam
 ond by integrating n-type 2D molybdenum disulfide (MoS₂) monolayers with 
 boron-doped p-type single-crystal diamond to form 2D/3D heterostructure P
 N junction diodes [3]. These devices demonstrate excellent room-temperatu
 re rectification\, with a forward current density of ~4000 A/cm²\, an ide
 ality factor of ~3.7\, and a rectification ratio approaching 10⁶. We furt
 her show that the rectification behavior arises from interlayer recombina
 tion of majority carriers\, governed by direct tunneling and Fowler–Nordh
 \n\nhttp://next-to-u.app/events/0840dba9-b4db-459d-8493-c4d02fdb68f5
URL:http://next-to-u.app/events/0840dba9-b4db-459d-8493-c4d02fdb68f5
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