ECE Colloquium: Han Wui Then (Intel)

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Innovations in GaN Technology Powering Future Electronics

As high performance compute solutions scale to higher power for AI platforms, gallium nitride (GaN) technology is gaining importance for its ability to offer higher performance, efficiency and density beyond current silicon- and III-V-based technologies. GaN power delivery solution is expected to move closer to the load, evolving from discrete solutions on motherboard to ultra-dense GaN power chiplets in a compute die complex. As power density increases, better efficiency and tighter integration are required. The GaN transistor technology needs to deliver high performance and efficiency at ultra-high current densities. Moreover, it needs to be as complete as possible with the required integrated CMOS functionalities such as controllers, drivers, biasing, telemetry, etc., because there is simply no room in the complex to accommodate separate CMOS companion die. Finally, it must also be capable of meeting all the required reliability metrics for power electronics. In this talk, I will discuss the technology ingredients needed to realize such a GaN chiplet technology and some of the latest innovations and advancements in 300mm GaN-on-silicon technology that are enabling industry to push the boundaries of performance, density, integration, and reliability.

Bio: Han Wui is a senior principal engineer at Intel Foundry Technology Research where he leads process R&D in analog and gallium nitride electronics. He is an IEEE Fellow, and recipient of the SRC Mahboob Khan Award, Intel Achievement Award, Gregory Stillman Semiconductor Research Award and John Bardeen Memorial Graduate Research Award. He has authored more than 80 publications and holds more than 200 US patents. He had served on technical committees of IEEE IEDM, IEEE CSICS, IEEE DRC and IWN.He received his Ph.D. and B.Sc. in electrical and computer engineering from the University of Illinois at Urbana-Champaign